The overheating effects in germanium quantum well with two subbands occupied

The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τ h - ph sat weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” characterized by dependence τ h - ph − 1 ∝ T2 to regime of small-angle scattering, described by dependence τ h - ph − 1 ∝ T5 with temperature increase. But in higher magnetic fields the dependence τ h - ph − 1 ∝ T3 manifests itself on dependences τh-ph(Th-ph). The possible explanations of such dependences are discussed.PACS: 72.15.Lh Relaxation times and mean free path; 72.20. My Galvanomagnetic and other magnetotransport effects; 72.20. −i Conductivity phenomena in semiconductors and insulators.