Low temperature metal interdiffusion bonding for micro devices

2012 
We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    2
    References
    1
    Citations
    NaN
    KQI
    []