Low temperature metal interdiffusion bonding for micro devices
2012
We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
1
Citations
NaN
KQI