Influence of channel length on PD SOI PMOS devices under total dose irradiation

This paper mainly investigates the total dose irradiation effects on 0.8 μm PD SOI PMOS devices which are exposed to 60Co γ-rays at a dose rate of 50 rad(Si)/s. The channel length dependence of SOI PMOS devices at total dose irradiation is investigated. The result shows that the threshold voltage shift is only a little larger for shorter channel devices at the same total dose. However, the degradation of maximum transconductance for shorter channel devices is more significant. We found that the oxide-trapped charge is the main factor impacting the threshold drift. We may conclude that a short channel device can produce more interface trapped charges by using the subthreshold separation technology.