Fabrication, investigation and manipulation of artificial nanostructures

The realization of nanometer-structures in the III-V-semiconductor system for the investigation of size dependent transport and optical properties and the improvement of the fabrication technology for the future use of these low-dimensional structures in optoelectronic devices has emerged growing interest over the past few years. The use of high resolution electron beam lithography is a very variable, direct technological approach for the fabrication of wire and dot structures and allows a flexible patterning of wire and dot arrays for the future communication technology [1].