Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (BiOi) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of BiOi. It has been found that the increase of oxygen content slows the BiOi annealing rate down. The activation energy of the BiOi dissociation has been determined and it was found that germanium doping does not change the activation energy.