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Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors
Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors
2010
Yuzhan Zheng
Wu Lu
Diyuan Ren
wangyiyuan
Zhikuan Wang
Yonghui Yang
Keywords:
Boron
Radiochemistry
Transistor
Doping
Common emitter
Materials science
Optoelectronics
low dose rate
boron concentration
Correction
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