Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

In contrast to the successful application of analytic equations to the current-voltage behavior of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225--400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage V{sub oc} increases with lower T which is caused by the same trapping effect.