Small‐signal admittance and switching measurements of the resonant‐tunneling diode

Measurements of the small‐signal admittance and the large‐signal switching time of In0.53Ga0.47As/AlAs resonant‐tunneling diodes are presented. The small‐signal admittance in the positive differential‐resistance region is found to be only a weak function of frequency. In contrast, the admittance in the negative differential‐resistance region is a strong function of frequency, and the associated time constant is a strong function of bias voltage. It is found that the large‐signal switching time is approximately a factor of 10 greater than the small‐signal time constant.