Low distortion and high-power GaAs FETs for digital cellular base stations

This paper describes the microwave performance of high-power GaAs FETs which has been developed by employing a novel chip fabrication technology and an optimizing technique for the matching network design. This FET achieves a P 1dB of 44.9 dBm (30.9 W) with a linear gain (G L ) of 12.6dB and the drain efficiency (η D ) of 53% (at V DS =10V). A saturation output power of 45.4 dBm (34.6 W) has also been obtained. The efficiency and distortion dependencies on the bias current conditions are also discussed. Features of the developed FET are not only the high output power but also the high efficiency and low distortion at class AB operation. This is very suitable for digital cellular base stations.