Numerical Study of InGaN Pattern Formation Caused by Phase Separation

We performed a numerical study of the two-dimensional pattern formation of InGaN driven by a phase separation using the cell dynamical system (CDS) approach to reveal the detailed nature of a self-assembled InGaN dot-like structure showing characteristic optical properties. We calculated two-dimensional pattern formations under various conditions. First, over a wide In compositional range (0pattern formation by a phase separation affects the emission mechanism of InGaN-based semiconductor light-emitting device because of a compositional fluctuation of In. Second, the calculated results suggest that the pattern formations depend on the experimental parameters, such as growth temperature, the average and local fluctuation of In composition, the lattice mismatch of InGaN and GaN, and defects.