C-bandGaNHEMT PowerAmplifier with220WOutput Power

Inthis paper, GaNHEMT highpoweramplifiers operating atC-bandarepresented. Improvement ofdevice performance andreduction ofthermal resistance withlarger gate pitchenabled1.4timespowerdensity comparedwiththe previous work(1)-(2). 167Woutput powerwasextracted froma single chipGaN HEMT with7W/mm powerdensity. 2-chip amplifier haverecorded 220Woutput poweratC-band, whichis thehighest outputpowereverreported forGaN HEMT amplifiers atC-bandandhigher bands. IndexTerms- High-voltage techniques, MODFET power amplifiers, Pulse measurements.