Vacancy‐Zn complexes in InP studied by positrons

Positron lifetime measurements have been performed in various InP crystals. The crystal doped with Zn to a concentration of 4.5×1018 cm−3 shows strong positron trapping by vacancy defects, but no vacancies are found in crystals doped with Zn to a lower concentration of 2×1018 cm−3 or doped with Sn, S, or Fe. The concentration of vacancy defects agrees well with the estimated number of neutral Zn atoms thus supporting strongly the idea that neutral Zn atoms are bound to complexes with P vacancies. The Zn‐vacancy complexes start to disappear above 400 °C.