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First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
2019
Luigi Di Benedetto
Gian Domenico Licciardo
Andreas Huerner
Tobias Erlbacher
Anton J. Bauer
Alfredo Rubino
Keywords:
Optoelectronics
Proof of concept
Composite material
Bipolar junction transistor
Materials science
Power semiconductor device
Field-effect transistor
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