Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.