Out of band radiation effects on resist patterning
2011
Our previous work estimated the expected out-of-band (OOB) flare contribution at the wafer level assuming that there is
a given amount of OOB at the collector focus. We found that the OOB effects are wavelength, resist, and pattern
dependent. In this paper, results from rigorous patterning evaluation of multiple OOB-exposed resists using the
SEMATECH Berkeley 0.3-NA MET are presented. A controlled amount of OOB is applied to the resist films before
patterning is completed with the MET. LER and process performance above and at the resolution limit and at the
resolution limits are evaluated and presented. The results typically show a negative impact on LER and process
performance after the OOB exposures except in the case of one resist formulation, performance improvement was
observed.
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