The scattering anisotropy and multivalued distribution of electrons in Si

The contribution of intravalley free carrier scattering on ionized impurities to the multivalued electron distribution has been investigated in silicon, theoretically as well as experimentally. Transverse field layers not followed by the formation of longitudinal domains in the sample have been observed for the first time. The scattering anisotropy and the electric-field-dependent free carrier density are introduced as new parameters which should be used to describe the influence of the doping level on the multivalued electron distribution in silicon.