GaAs read-type impatt diode for 130 GHz CW operation

K. Chang,J.K. Kung,P.G. Asher,G.M. Hayashibara,R.S. Ying

GaAs read-type impatt diode for 130 GHz CW operation

1981

K. Chang
J.K. Kung
P.G. Asher
G.M. Hayashibara
R.S. Ying

A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.

Keywords:

IMPATT diode
Schottky barrier
Gallium arsenide
Electronic engineering
Extremely high frequency
Schottky diode
Epitaxy
Optoelectronics
Mathematics
epitaxial material
semiconductor technology
Energy conversion efficiency
Oscillation
design analysis

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