Zero bias terahertz and subterahertz detector operating at room temperature

In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg1-xCdxTe is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3·10 -8 W/Hz 1/2 and 5.4·10 -9 W/Hz 1/2 at bias current I = 1 mA and I = 0, respectively.