Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1

Abstract Ambipolar field-effect transistors (FETs) based on solution-processed organic-inorganic bilayer structures were investigated. An amorphous indium oxide (InO x ) film, as the n-type semiconducting layer, was prepared with an environmentally friendly method and annealed at a low temperature; and a low band-gap (LBG) donor–acceptor (D–A) conjugated polymer, FBT-Th 4 (1,4), was spin-coated on the InO x film as the p-type semiconducting layer. To improve the p-type mobility, a self-assembled monolayer (SAM) of octadecyl-phosphonic acid was introduced to modify the surface of InO x . The ambipolar FETs showed high and well-balanced hole and electron mobilities of 1.1 and 1.5 cm 2  V −1  s −1 , respectively. Furthermore we found that ambipolar FETs could be integrated into functional complementary metal oxide semiconductor (CMOS)-like inverters.