Old Web
English
Sign In
Acemap
>
Paper
>
Quantitative Sensing of the Internal Electric-field in Power Devices Using NV Centers
Quantitative Sensing of the Internal Electric-field in Power Devices Using NV Centers
2017
Takayuki Iwasaki
Wataru Naruki
Kosuke Tahara
Renato Goes Amici
Toshiharu Makino
Hiromitsu Kato
Masahiko Ogura
Daisuke Takeuchi
Satoshi Yamasaki
Mutsuko Hatano
Keywords:
Power semiconductor device
Electric field
Electronic engineering
Materials science
Electrical engineering
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]