Paper No 7.3: Solution-Processed Oxide Semiconductors for High-Mobility Thin-Film Transistors

We studied the fabrication and performance of solution-processed oxide thin-film transistors. Various amorphous and polycrystalline semiconductors were studied, among them are zinc tin oxide, tin oxide, and indium oxide. Mobilities over 20 cm2/Vs are achieved. The use of solution process high-k dielectrics such as aluminum oxide or hafnium oxide allow the TFTs to be used as low power-consuming and stable devices for display applications.