Ultraviolet light-emitting diode with high reflection film and manufacturing method of ultraviolet light-emitting diode

The invention discloses an AlGaN-based ultraviolet light-emitting diode device with a high reflection film structure and a manufacturing method of the ultraviolet light-emitting diode, relates to the technical field of micro-electronics, and mainly solves the problem of low luminous efficiency of a back light-emitting structure of an ultraviolet light-emitting diode. The device sequentially comprises a substrate, an AlN nucleating layer, an n-type AlGaN potential barrier layer, an active area, a p-type AlGaN potential barrier layer and a p-type GaN cap layer, and a high reflection film is manufactured on the p-type AlGaN potential barrier layer and used for emitting light from the bottom of the device after reflecting the light. The light absorbed by the p-type GaN cap layer in the ultraviolet light-emitting diode is emitted from the bottom of the ultraviolet light-emitting diode, so that the power and the efficiency of the emergent light are greatly improved. The device is simple in process, fine in repeatability and high in reliability, and can be used for the field of air/water purification, medical treatment, biomedicine, white-light illumination, space communication and the like.