Si(100)2 × n structures induced by Ni contamination

Abstract It has been reported that phases of 2 × n structures (6 n n structures are induced by Ni contamination in the range between 0.35 and 0.95% of the Auger electron peak ratio, Ni LMM/Si LVV. Appearance of the 2 × n structures and the variation of n are closely correlated with the surface Ni concentration which depends on quenching temperature and cooling rate. By intensity analysis of LEED patterns, it is concluded that the 2 × n structures are ordered phases of missing-dimer defects induced by Ni contamination which is supposed to influence the ordering of missing-dimer defects.