Structure and evolution of the displacement field in hydrogen-implanted silicon.

Gf Cerofolini,Laura Meda,C. Volpones,G. Ottaviani,J. Defayette,R. Dierckx,D Donelli,M Orlandini,M. Anderle,R. Canteri,Corneel Claeys,Jan Vanhellemont

Structure and evolution of the displacement field in hydrogen-implanted silicon.

1990

Gf Cerofolini
Laura Meda
C. Volpones
G. Ottaviani
J. Defayette
R. Dierckx
D Donelli
M Orlandini
M. Anderle
R. Canteri
Corneel Claeys
Jan Vanhellemont

La simulation MARLOWE decrit bien le profil de l'hydrogene. La deformation cristalline resultante ne peut etre interceptee en termes d'un endommagement imparti a la cible de silicium, mais elle est principalement liee au champ de deplacement autour de l'hydrogene

Keywords:

Ion implantation
X-ray crystallography
Single crystal
Secondary ion mass spectrometry
High-resolution transmission electron microscopy
Nuclear magnetic resonance
Hydrogen
Transmission electron microscopy
Physics
Silicon
Displacement field

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