Temperature-sensitive spatial distribution of defects in Pd Se 2 flakes

Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. Methods reported so far mainly rely on the $e\phantom{\rule{0}{0ex}}x\phantom{\rule{0.333em}{0ex}}s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}u$ engineering of defect type and concentration, hindering the realization of new types of device functionalities associated with defect engineering. Here, the authors report temperature-sensitive spatial redistribution of defects in PdSe${}_{2}$ thin flakes through scanning tunneling microscopy. The spatial characteristics of defect distribution is strongly related to the electronic transport properties such as anisotropic carrier mobility and phase coherent length, indicating a different avenue for creating novel device functionalities based on $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0.333em}{0ex}}s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}u$ modulation of defect distribution.