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The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE
The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE
2019
R. A. Salii
S. A. Mintairov
A. M. Nadtochiy
V. N. Nevedomskiy
N. A. Kalyuzhnyy
Keywords:
Metalorganic vapour phase epitaxy
Quantum dot
Optoelectronics
Materials science
ingaas gaas
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