Influence of backside metallization on a coplanar X-band LNA

In this paper the influence of the backside metallization on a coplanar X-band low noise amplifier MMIC is described. First, we demonstrate the selection of transistor devices including the modelling especially with respect to the extraction of RF noise parameters. After that the simulation results and the layout of the LNA are presented, neglecting backside effects on coplanar circuits. Completing measurements on the fabricated LNA show the influence of the backside metallization in comparison with simulation results.