Epitaxial Layers Si: (Sn,Yb) Produced by the Crystallization From the Melt-Solution on the Basis of Sn.

Epitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods. At low concentration of lantha-noid (0,01 0, 1 weight % microirregularities are presented. In EL Si:(Sn, Yb) irradiated by 4,5 MeV-eleotrons the suppression of the generation of radiaton defects,responsible for G- and C-lines of PL, has been found. This effect has been ex-plained within the score of the model takeng into the consideration gettering propering of Yb in reference to the impurities of 0 and C as deformation fields,attributed to the presence of Sn atoms.