Magnetoresistance Effect in a La0.8Bi0.2MnO3/MgO/Co Trilayer Device

The device composed of La 0.8 Bi 0.2 MnO 3 /MgO/Co trilayer (with a tunnnel barrier made of MgO film) as an L 1-x Bi x MnO 3 substrate are prepared, and the magnetoresistance effect of the device is examined. Fundamental temperature properties of electrical conduction of the La 0.8 Bi 0.2 MnO 3 /MgO/Co trilayer device as a function of MgO thickness is determined. It was found that the magnetoresistance was about 33% of the maximum value when the MgO film thickness was 2.0 nm and the device shows damped oscillation with increasing MgO film thickness.