Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs
1996
Abstract The piezoelectric effect has been demonstrated for the first time in strained ZnSe ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 × 10 5 V/cm has been observed in Zn 0.8 Cd 0.2 Se quantum wells that have a 1.3% lattice mismatch with the substrate.
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