Piezoelectric effect in ZnSe/ZnCdSe quantum wells grown on (211)B GaAs

Abstract The piezoelectric effect has been demonstrated for the first time in strained ZnSe ZnCdSe quantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 × 10 5 V/cm has been observed in Zn 0.8 Cd 0.2 Se quantum wells that have a 1.3% lattice mismatch with the substrate.