The effect of graphene and reduced graphene oxide in the resistive switching behavior of La0.7Ba0.3MnO3

Abstract Future developments in the non-volatile memory design like resistive random access memory (RRAM) holds the backbone of data-controlled applications. The present study reports the investigation of the resistive switching behaviour of a novel nanocomposite system composed of La0.7Ba0.3MnO3 and Graphene (Gr)/reduced graphene oxide (rGO) for memory design. The presence of Gr offers a superior switching behaviour, the microscopic origin of which lies in the formation/breakage of conduction filamentary paths, formed through the presence of oxygen vacancies as supported via X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) measurements. The change in the resistance states can be accounted for the exchange interaction along the Mn3+ - O2− - Mn4+ chain, offering simultaneous control over the resistance states via the electric and magnetic field. The conduction behaviour is dominated by the Fowler-Nordheim tunnelling mechanism. The presence of robust and stable switching behaviour over 1000 cycles, stable ON/OFF ratio, and simple synthesis process indicates the potential of the present material system(s) to be an interesting candidate for future memory design.