Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products

NGST is developing advanced high frequency HEMT device and MMIC technologies to address imminent applications at MMW frequencies above 80 GHz through 300 GHz. The improved device transport characteristics, high transconductance, and gain at very high frequencies will benefit next generation communications, radar, imaging and radiometer systems. In this paper, we status the development and production of 0.1 mum GaAs HEMT, 0.1 mum InP HEMT and sub 0.1 mum InP HEMT technologies for high frequency mmW circuits.