Kinetic and thermodynamic aspects of metal organic MBE

Abstract The thermodynamic framework for carbon formation in the growth of III- V semiconductors from metal organics has been determined for normal MOVPE and for MBE. conditions. It is shown that both the detailed results in normal MOVPE and successful growth in MBE can only he explained in terms of kinetic barriers. The analysis predicts that a high hydrogen activity and the use of higher metal trialkyls should both lead to lower carbon concentrations in MBE layers.