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Characterization of 4H-SiC Wafer and SiO2/SiC Using a Laser Terahertz Emission Microscope
Characterization of 4H-SiC Wafer and SiO2/SiC Using a Laser Terahertz Emission Microscope
2017
Hidetoshi Nakanishi
Tatsuhiko Nishimura
Katsuya Fujita
Fujikazu Kitamura
Minoru Mizubata
Iwao Kawayama
Masayoshi Tonouchi
Keywords:
Laser
Analytical chemistry
Wafer
Silicon carbide
Far-infrared laser
Terahertz radiation
Microscope
Optoelectronics
Materials science
thz waves
Correction
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