Magnetoquantum effects in two-dimensional accumulation layers of single-barrier tunnel structures

Abstract A two-parameter variational wave function is used to calculate the properties of a two-dimensional accumulation layer in an (InGa)As/InP single-barrier tunnelling hetrostructure under an applied bias. This model is used to describe the effect of a quantizing magnetic field applied perpendicular to the semiconductor layers. Using a Gaussian-broadened density of states to describe the Landau-level structure, the magnetoquantum oscillations in the sheet density, Fermi energy and tunnel current are calculated. The model accounts for the general features of the observed oscillations. The contribution of the density of states to the magnetocapacitance oscillations in tunnel structures is also discussed.