Photoelectric conversion element, photoelectric conversion device, and method for manufacturing photoelectric conversion element

In some cases wherein a window layer or the like is additionally arranged on a buffer layer, the buffer layer and a light absorption layer are likely to be damaged during the formation of the window layer due to inferior moisture resistance and plasma resistance. As a result, conventional photoelectric conversion elements sometimes fail to achieve sufficient conversion efficiency in terms of reliability. Disclosed is a photoelectric conversion element which comprises: a light absorption layer that is arranged on a lower electrode layer and contains a group I-B element, a group III-B element and a group VI-B element; a first semiconductor layer that is arranged on the light absorption layer and contains a group III-B element and a group VI-B element; and a second semiconductor layer that is arranged on the first semiconductor layer and contains an oxide of a group II-B element. The light absorption layer has a doped layer region on the first semiconductor layer side, and the doped layer region contains the group II-B element.