Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs

This work describes a novel equivalent circuit representation for the modeling of low frequency 1/f noise in Heterojunction Bipolar Transistors (HBTs), and is presented as part of an extraction procedure which combines direct calculation of the HBT equivalent circuit from S-parameters, and separate measurement of the base and collector noise voltage spectra to determine the magnitude and physical location of the dominant intrinsic 1/f noise sources within the device.