Enhanced Low Dose Rate Sensitivity Analysis of Vertical BJT-STMicroelectronics

Enhanced Low Dose Rate Sensitivity of many BJT-STM transistors have been studied. The devices 2N2222AHR, 2N2907AHR, 2N5401HR, 2N5551HR, 2N3810HR and 2ST3360HR have been tested getting up to TID: 100Krad according to ESCC22900 specification. They have been tested with two different dose rate (10mrad/s and 100mrad/s) in two different biasing conditions (ON/OFF) with the aim of identify or verify the ELDRS effect of Hi-Rel& Rad-Hard BJT vertical transistors. The radiation results obtained for all products showing good performance up to 100Krad and any dose rate effect can be observed.