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A new pseudomorphic In0.2Ga0.8As layers HEMT using Al0.52In0.48P as barrier layer
A new pseudomorphic In0.2Ga0.8As layers HEMT using Al0.52In0.48P as barrier layer
1993
Geok Ing Ng
Yong Jie Chan
Dimitris Pavlidis
Youngwoo Kwon
T. Brock
J. M. Kuo
Keywords:
Induced high electron mobility transistor
Barrier layer
Threshold voltage
Molecular beam epitaxy
Analytical chemistry
High-electron-mobility transistor
Materials science
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