MgZnO solar-blind photoresistor and preparation method thereof

The invention discloses a MgZnO solar-blind photoresistor and a preparation method thereof, belongs to the field of photoelectron information, and is mainly used in solar-blind photoresistors with low bias voltage and high response. The problem of separation during MgZnO preparation with a high component Mg is solved. According to the method for preparing the solar-blind photoresistor by a MgZnO thin film, a first MgxZn1-xO transition layer, a second MgyZn1-yO transition layer, a MgZZn1-ZO thin film with the high component Mg and an electrode grow on an R-surface sapphire substrate; and the method comprises the following steps of: 1, conveying the cleaned R-surface sapphire substrate into a molecular beam epitaxy (MBE) pregrowing chamber; 2, treating the R-surface sapphire substrate at the temperature of between 750 and 850 DEG C for 15 to 30 minutes in the pregrowing chamber; 3, conveying the R-surface sapphire substrate into a growing chamber; growing the first MgxZn1-xO transition layer which is 2 to 10nm thick at the growing temperature of between 400 and 500 DEG C, wherein x is in a range of 0.16 to 0.20; and then growing the second MgyZn1-yO transition layer which is 2 to 10nm thick at the same growing temperature, wherein y is in a range of 0.26 to 0.40; 4, growing the MgZZn1-ZO thin film at the growing temperature of between 400 and 500 DEG C, wherein z is in a range of 0.43 to 0.55; and 5, preparing the metal electrode which is 100 to 150 nm thick on the MgZZn1-ZO thin film, wherein metal materials are Al, Au and Pt. The preparation process is simple, and the cost is low.