Mechanical Stress in SiO2 Films Obtained by Remote Plasma‐Enhanced Chemical Vapor Deposition

Using a single laser beam reflection technique, the authors have examined mechanical stress in thin SiO 2 films obtained by a remote plasma-enhanced chemical vapor deposition technique. The films were deposited in the 200-600 o C temperature range, at a total ressure of 8 mTorr, at 30 or 300 W rf power, using a remote oxygen-plasma silane reaction. All investigated films were found to be in compressive stress at room temperature. Total stress ranged from 1.3 to 2.3×10 9 dynes/cm 2 (compressive), and the calculated intrinsic stress component ranged from 0.1 to 1.5×10 9 dynes/cm 2 (compressive)