Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imaging

The nonuniform temperature distribution in a crystal surface during ultrasonic loading has been detected. This effect was associated with a sonic-stimulated temperature rise around dislocations and heating of the nonperfect regions of the samples investigated. The dislocation moved in an ultrasonic field was considered as a linear thermal source. We calculated the temperature distribution around dislocations and determined conditions of the discrete and continuous distribution of thermal sources for Hg 1-x Cd x Te alloys. We also discuss the possibility of using the investigated effect as the basis of a non-destructive technique for extended defect mapping and imaging in crystals.