Plated Source Bridge (PSB) GaAs Power FET with Improved Reliability

Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.