Synthesis and Field Emission Characteristics of Ga2O3 Nanorods with Ultra-Sharp Tips

We successfully synthesized beta-Ga 2 O 3 nanorods with ultra-sharp tips without use of a catalyst. The nanorods were produced by heating a GaAs wafer in a CVD chamber. The morphology and structure of the nanorods were characterized by scanning electron microscopy(SEM), Energy Dispersive X-ray Spectroscopy (EDS) and Raman-Scattering Spectroscopy. The field emission characteristics demonstrated a turn-on field of about 2.1 V mum -1 and the threshold electric field of 5.6 V mum -1 .