Surface emission semiconductor laser device with two-inner-cavity contact type n-side light emergency framework supporting structure

A dual lumen contact the n-side light-emitting surface of the framework support structure and a manufacturing method for a semiconductor laser, a semiconductor laser belongs to the technical field of manufacturing. Related prior art using the p-type and n-type electrodes are contact-lumen, but only the p-side electrode is introduced in order to reduce the resistance bilateral DBR. The main problems of this technology is, P-type and n-type electrodes on the same side of the opening, which is impossible to prepare an electrode as a closed loop, since the half-loop type, an asymmetric distribution of current, injected carriers photon-induced light field formed by uneven distribution. Laser structure proposed by the present invention, the p-type and n-type electrodes on both sides of the device, forming a double lumen structure contacting the p-type DBR injection current to bypass the n-type DBR and directly into the active region; simultaneously using n-side frame supports structure and manufacturing method, the etching process is formed to solve the n-type electrode window, the active region is insufficient strength of the connection structure of the device caused by caving problems.