Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction

To investigate metal-ferroelectric-insulator-semiconductor (MFIS) stack design guidelines for its applications, the ferroelectricity in various IL thicknesses were investigated. As a result, IL has leaky insulator characteristics rather than an ideal dielectric and the MFIS stack shows a critical difference in ferroelectric characteristics.