Low-Noise Bulk Unipolar Devices in Si and GaAs

Low-temperature vapour phase epitaxy was applied to fabricate multilayer structures like camel diodes and camel transistors. Using the Low Pressure Vapour Phase Epitaxy (LP-VPE) silicon camel diodes with a conversion loss as low as 6 dB at 12 GHz and a noise figure of 7 dB were realized. GaAs hot electron transistors were fabricated by Organo-Metallic Vapour Phase Epitaxy (OM-VPE).