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N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
2017
Prasertsuk Kiattiwut
Tanikawa Tomoyuki
Kimura Takeshi
Kuboya Shigeyuki
Suemitsu Tetsuya
Matsuoka Takashi
Keywords:
Metalorganic vapour phase epitaxy
Analytical chemistry
Materials science
Polar
Optoelectronics
flat interface
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