Annealing of Sb+‐ion‐implanted Si

The behavior of Sb+‐implanted Si(100) during rapid thermal annealing was studied at different annealing temperatures and implantation doses. The range of dose was chosen so that the concentration of implanted Sb spanned the limit of solid solubility in Si. It is shown that the behavior of the Sb in excess of solubility limits is dependent on both the heating cycle and the implantation dose. Under certain conditions the excess Sb migrates to the surface where it forms a thin continuous film. However, under different conditions Sb precipitates and remains in the bulk. In the latter case, an anomalous loss of Sb from substitutional solid solution occurs. The mechanisms responsible for the precipitation behavior and its effect on dopant activation are discussed. Transmission electron microscopy and Rutherford backscattering were used to characterize the samples.