Mass spectrometer characterization of reactions in photoresists exposed to extreme ultraviolet radiation
2011
The development of resists that meet the requirements for resolution, line edge roughness and sensitivity remains one of
the challenges for extreme ultraviolet (EUV) lithography. Two important processes that contribute to the lithographic
performance of EUV resists involve the efficient decomposition of a photoacid generator (PAG) to yield a catalytic acid
and the subsequent deprotection of the polymer in the resist film. We investigate these processes by monitoring the
trends produced by specific masses outgassing from resists following EUV exposure and present our initial results. The
resists tested are based on ESCAP polymer and either bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate or
bis(4-tert-butylphenyl)iodonium triflate. The components originating from the PAG were monitored at various EUV
exposure doses while the deprotection of the polymer was monitored by baking the resist in vacuum and detecting the
cleaved by-product from the polymer with an Extrel quadruple mass spectrometer.
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